Transition simulation of a-Si TFT/LCD pixel using table-modeling technique

• Main Authors: Yang, Wen-Hong, 楊文弘
• Other Authors: Yao-Tsung Tsai
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/98101794826999995161

碩士 === 國立中央大學 === 電機工程學系 === 85 === This thesis presents to study a-Si device modeling, and to improve deviceand circuit simulation by using table-modeling technology. It's divided intothree parts.First of all, the table-modeling technique will be discussed. The table- modelingtechnique requires the current and capacitance tables. In order to verify thetable-modeling technique, the off-grid current will interpolate with measuredcurrent. The table- modeling technique has been proved because the result isreasonable.Part 2 applys the table-modeling technique to simulate a-Si TFT pixel. The current and capacitance tables are obtained from a-Si analytical circuit model.The simulation results are compared with the analytical model to make sure that the table-modeling technique is practical and reliable.In the previous part, the analytical model is a circuit-level model based on many assumptions. This model can not completely predict the semiconductor device. Thus, the 2-D numerical model is used as a good approximation to simulate a-Si TFT pixel. For this reason, the current and capacitance tables are generated from 2-D numerical model. The table-modeling technique will alsosimulate one pixel. The simulation in a-Si circuit application using the table-modeling technique is very close to that using 2-D numerical model. We also discuss the non-quasi static effects on the table model technique.