| Summary: | 碩士 === 國立中央大學 === 電機工程學系 === 85 === This thesis presents an equivalent circuit approach for
one-and two-dimensional numerical mixed-level device and circuit
simulation. In such an equivalent circuit approach, Poisson's
andContinuity equations are formulated into a subcircuit format
suitablefor general circuit simulators. Different from
conventional approaches,our approach is conceptually simple and
the extension of this model tothree-dimensional semiconductor
simulation is just straightforward. It'salso easy to implement
this model in many existing circuit enivornmentssuch as HSPICE.
The utility of this new model in mixed-level simulationis
demonstrated by applying to our own circuit simulator and
HSPICE.Various applications such as PN diode switching circuit,
SOS test circuit,MESFET, and MOSFET are taken as examples to
verify the proposed algorithm.By the use of this technique, it's
helpful for us to investigate the interactions between
semiconductor devices and the circuits in whichthey are embedded
from physical point of view.
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