| Summary: | 博士 === 國立清華大學 === 電機工程學系 === 85 === High-performance InGaAs/InP photodiodes are vital components
for long-wavele-ngth optical fiber communications and
measurements. This dissertation exploresin depth the material
characterization, device fabrication, measurement, calc-ulation,
and analysis. For the Er-doped InGaAs PIN photodiodes grown by
liquidphase epitaxial(LPE), the growth and characterization of
Er-doped InGaAs laye-rs, and fabrication and performance of Er-
doped PIN photodiodes have been inv-estigated. For the planar
devices, we have proposed a distributed impedance model and
diode impedance calculation, and RLC modeling on frequency
response.We also present the preliminary efforts on reliability
of the fabricated grow-n by metal-organic chemical vapor
deposition(MOCVD) devices. In respect of thehigh speed PIN
photodiode, we have demonstrated a simple, high yield planar -
process for fabricating low-capacitance InGaAs PIN diodes on
semi-insulating InP substrate withbandwidth exceeding 14 GHz.
In addition, we have successfu-lly fabricated the uniform and
high performance of monolithically integrated 1 x 12 array of
planar InGaAs PIN photodiodes. These photodiode arrays have hi-
ghly uniform characteristics and good performance in dark
currents and photor-esponsivities. Lastly, the device of planar
InGaAs/InP avalanche photodiodes have been fabricated and
characterized. The gain-bandwidth products of 10 GHz were
obtained.
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