High-Performance InGaAs/InP Semiconductor Photodiodes for Optical Fiber Communication

• Main Authors: Ho, Wen-Jeng, 何文章
• Other Authors: Wu Meng-Chyi, Tu Yuan-Kuang
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/18931707779154450473

博士 === 國立清華大學 === 電機工程學系 === 85 === High-performance InGaAs/InP photodiodes are vital components for long-wavele-ngth optical fiber communications and measurements. This dissertation exploresin depth the material characterization, device fabrication, measurement, calc-ulation, and analysis. For the Er-doped InGaAs PIN photodiodes grown by liquidphase epitaxial(LPE), the growth and characterization of Er-doped InGaAs laye-rs, and fabrication and performance of Er- doped PIN photodiodes have been inv-estigated. For the planar devices, we have proposed a distributed impedance model and diode impedance calculation, and RLC modeling on frequency response.We also present the preliminary efforts on reliability of the fabricated grow-n by metal-organic chemical vapor deposition(MOCVD) devices. In respect of thehigh speed PIN photodiode, we have demonstrated a simple, high yield planar - process for fabricating low-capacitance InGaAs PIN diodes on semi-insulating InP substrate withbandwidth exceeding 14 GHz. In addition, we have successfu-lly fabricated the uniform and high performance of monolithically integrated 1 x 12 array of planar InGaAs PIN photodiodes. These photodiode arrays have hi- ghly uniform characteristics and good performance in dark currents and photor-esponsivities. Lastly, the device of planar InGaAs/InP avalanche photodiodes have been fabricated and characterized. The gain-bandwidth products of 10 GHz were obtained.