Fabrication of Amorphous Silicon Germanium Near IR Photodetector
碩士 === 國立清華大學 === 電機工程學系 === 85 === The purpose of this thesis is to fabricate a-SiGe:H IR detectors. Two mainefforts of this thesis are (1)fabrication of a-SiGe:H films. (2)NIPIN IR photodetectors. In order to reduce the influence of t...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36750805553945830401 |
| Summary: | 碩士 === 國立清華大學 === 電機工程學系 === 85 === The purpose of this thesis is to fabricate a-SiGe:H IR
detectors. Two mainefforts of this thesis are (1)fabrication of
a-SiGe:H films. (2)NIPIN IR photodetectors.
In order to reduce the influence of the particulate formation in
thepreparation of a-SiGe:H films, high hydrogen dilution ratio
which is about93 % and pulse RF power is used for a-SiGe:H
films. The particulate formationis decreased by using pulse RF
power. The device structure of a-SiGe:H photo detector is
NIPIN barrier type phototransistor. The I layer which light is
first incident is the visible lightabsorption region and the
other is the IR light absorption region.The photo to dark
current ratios of this device under 780 nm LED illumination is
over 100 and the photocurrent is over 1 uA which is enough for
the requirement for the circuit design.
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