A Study of Ultra-thin Gate Oxides on Deep Sub-micron Devices
碩士 === 國立清華大學 === 材料科學與工程研究所 === 85 === As the device dimensions scaled down,t he thickness of gate oxides must decrease in order to suppress short-channel effects, improves device speed, and increase current drivability. However, the decreasing of gat oxides can lead to an intolerable degrada...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1997
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/75833927342385018421 |