| Summary: | 碩士 === 國立海洋大學 === 電機工程學系 === 85 === Abstract: The main object of this thesis concentrates on the
research of ZnSe epilayeron porous silicon and its applications.
t\In the process, hetero-epitaxy of ZnSetemperature at posesses
a direct energy gap of 2.68eV at room temperature is being
carried out on porous Silicon. Consequence by using XRD,SEM,
SIMS, and PL spectrum. Besides, the nature of device is also
being tested by using I-V. In addition , We also dicuss the
influnceof diffusion conditions upon the presentation of
photodetectors. In the measurementof the ZnSe. Measurement of
device, the experimental results reveal that the device with
diffusiontemperature of 300C and driving time of 30 minutes has
better responsivity.
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