Anti-reflection coatings on semiconductor laser facets

• Main Authors: Kuo, Jui-Ming, 郭瑞銘
• Other Authors: Lin Ching-Fuh
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/74176892462001771661

碩士 === 國立臺灣大學 === 光電工程學研究所 === 85 === In this thesis we report the theory and fabrication of the anti-reflection c oatings on semiconductor laser facets. We use the theory of optical thin films to calculate the refractive index and thickness of the film. The coating sourc esare SiO2 and TiO2, and the deposition method is electron-beam evaporation. W efabricate AR coatings for 820 nm and 1560 nm semiconductor lasers. For 820 nm semiconductor lasers, we measure L-I curves and spectrums before and after ARc oatings, and calculate the power reflectivity. The lowest power reflectivityis 0.01%, and the bandwidth of the reflectivity lower than 0.02% is 20 nm. For15 60 nm semiconductor lasers, we only measure L-I curves before and after ARcoat ings. Due to the weak power after AR coatings, the measured spectrum is notava qlable.