A Study of the Defects in CdTe Crystals

• Main Authors: Kuan, Jui Feng, 管瑞豐
• Other Authors: Lay Kuen-Tsair
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/13971834719160868488

碩士 === 國立台灣工業技術學院 === 電子工程技術研究所 === 85 === The CdTe crystals have been grown by the temperature gradient solution growth (TGSG) in our experiment. In order to obtain high resistivity r-ray detector , it is usually doping Chorine to make the self-compensation. Defects could be resulted from the impurities or imperfections in CdTe. The electronic and optical properties of material could be affected by the traps formed by these def-ects. It is very important to determine the defect levels in the bandgap for understanding the properties of material.Therefore, the defect levels in the bandgap of undoped CdTe and Cl-doped CdTewere determined by photoluminescence(PL), deep level transient spectroscopy(DLTS) and thermal stimulated current(TSC) measurements. Besides, we can getmore detail information of defect levels by the process of Cd-annealing andTe-annealing.