The Study of a-Si:H Deposition on Si and SiO2 by Low-Temperature PECVD
碩士 === 國立雲林科技大學 === 電子與資訊工程技術研究所 === 85 === The structural and electrical properties of the a-Si:H films deposited on Si and SiO2 surfaces by plasma-enhanced chemical vapor deposition (PECVD) in the temperature range of 30 to 360℃ were investigated in this work. The thickness and surface morphol...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42045722356622825102 |