| Summary: | 碩士 === 中原大學 === 應用物理研究所 === 86 === In this report, the optimums way for preparation and characterization of C60 thin film with respect to two kinds of substrate (cover-glass and sapphire) and different substrate temperatures (from 260℃to 485 ℃are studied). Those C60 thin films with substrate temperature among 436 ℃and 485 ℃can''t be observed any structure from the analysis of X-ray diffraction. But, the X-ray diffraction has shown those C60 thin films with substrate temperature between 260 ℃and 409 ℃are highly oriented in (111)、(220) and (311) directions and have larger size of C60 grains from SEM (Scanning Electron Microscopy) measurement. Meanwhile, similar results are obtained in either cover-glass or sapphire substrate. The results imply that choice of substrate is not a critical factor for the formation of a polycrystalline C60 thin films. From SEM measurements, the morphology and the size of the crystalline of C60 thin films with respect to different preparation conditions are studied. From the Raman spectra, we observe the 1464 cm-1and 1573 cm-1 is attributed to C60 Ag mode and Hg mode ,respectively, and 1360 cm-1、1600 cm-1 are attributed to disorder carbon. The different change with different preparation condition were observed. We also observed the three order change on disorder / order phase transition near 260 K according to the relation of resistively of C60 thin films and temperature on the C60 thin films which substrate temperature is 352 ℃.
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