| Summary: | 碩士 === 國立成功大學 === 材料科學(工程)學系 === 86 === RF magnetron sputtering deposition of LaNiO3 conductive thin
film on N-type Si wafer and Platinium electrode was studied.
Properties of the thin film under difference deposition
condition, including deposition rate, crystallography,
composition, surface morphology and resistivity were
investigated. LaNiO3 was choose as a buffer layer for Pb0.9La0.1
Ti0.975O3 (PLT)pyroelectric thin film.The experiment results
indicated that LaNiO3 thin film deposited on Pt/SiO2/Si
substrate have (100) preffered orientation. The resistivity of
LaNiO3 thin film on Pt/SiO2/Si substrate is low enough to serve
as the buffer layer of bottom electrode. On the other hand, the
surface morphology of LaNiO3 thin film was smooth. It is
suitable for further deposition of pyroelectric thin film.PLT
thin film which deposited on LaNiO3/Pt/SiO2/Si substrate also
have (100) preferred orientation. The leakage current problem
of PLT thin film have been improved by the inserting LaNiO3
buffer layer. The hysterisis loop shows the ferroelectricity of
the thin film.From the results, we found that PLT thin film was
not c-axis preferred orientation. Because of the difference of
thermal expansion between PLT thin film and substrate.
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