| Summary: | 碩士 === 國立成功大學 === 電機工程學系 === 86 === Because driving easily , Power MOSFETs (Mental-Oxide-
Semiconductor Field Effect Transistors) and IGBTs (Insulated
Gate Bipolar Transistors) have become the most popular power
switching devices for power electronic applications . They show
all of their advantages optimally , especially those where high
switching speeds are important . For various kinds of power
supply systems , besides increasing system capacity , how to
operate at higher efficiency and switching frequency is an
important subject , and the above associated with power switches
directly . In high power applications , we often reach the goal
by paralleling the swiching devices . In this thesis , a
chopper circuit used to analyze the characteristics of the IGBTs
and MOSFETs , and discuss the considerations of the circuit
design when switching devices are paralleled . Finally , a
1.5kilowatt single-phase inverter has been built , using these
two power switches,by different paralleled types , switching
frequencies and output power ratings ,comparing the efficiency
of the inverter to discuss the effect of the switchingdevices
characteristics .
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