Isoelectronic In-doped GaN Studied by Photoluminescence and Raman Spectroscopy
碩士 === 國立交通大學 === 電子物理系 === 86 === In order to investigate the effect of isoelectronic doping on the properties of GaN, In-doped GaN films grown at various temperatures, with different TrimethylIndium (TMIn) flow rates and buffer layer thicknesses were prepared and studied by Photoluminescence (P...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10564454221584200998 |