The X-Ray Study of GaN Buffer Layer Grown on Sapphire

The X-Ray Study of GaN Buffer Layer Grown on Sapphire

碩士 === 國立中央大學 === 物理學系 === 86 ===

Bibliographic Details
Main Authors:	Teng, Yao-Chung, 鄧堯中
Other Authors:	Guo-Chung Chi, C.H.Lee
Format:	Others
Language:	zh-TW
Published:	1998
Online Access:	http://ndltd.ncl.edu.tw/handle/16405181109806910214

Similar Items

Effect of AlN Buffer Layer on the GaN Grown on Patterned Sapphire Substrate
by: 古皓齊
Published: (2016)

The Study of GaN Thick Film Grown on Sapphire Substrate with PVD AlN Buffer Layer by HVPE
by: Sun, Chen-Yuan, et al.
Published: (2015)

GaN Layer Grown on Pattern Sapphire Substrate with Oxide Spacer
by: Li,Jhih-Siang, et al.
Published: (2019)

Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
by: Wei-Ching Huang, et al.
Published: (2013)

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
by: Bogdan I. Tsykaniuk, et al.
Published: (2017-06-01)

Structural Study of GaN Grown on Si with Different Buffer Layers
by: Liu, Cheng_Han, et al.
Published: (2005)

Improved GaN quality by modifying sputter AlN buffer layer on pattern sapphire substrate
by: Kuo,Yen-Ting, et al.
Published: (2017)

Analysis of microstructures and defects of GaN grown on sapphire substrates
by: Jyun-yu Li, et al.
Published: (2009)

Influences of GaN Nucleation Layer on the Quality of GaN/Sapphire by LP-MOCVD
by: Chia-lin Chen, et al.
Published: (2004)

The Study of Non-Polar GaN Directly Grown on Sapphire Substrate by HVPE
by: Fang,Yao-De, et al.
Published: (2014)

Optical Characterization of GaN Epitaxial Layer and LED Structure Grown on Patterned Sapphire Substrate
by: Jeff Yang, et al.
Published: (2005)

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
by: Bogdan I. Tsykaniuk, et al.
Published: (2017-08-01)

Study of electronic transport parameters on the heterojunction of AlGaN/GaN, grown on Sapphire: two layer model
by: Sanju Shrestha, et al.
Published: (2018-11-01)

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer
by: Jie Song, et al.
Published: (2017-03-01)

Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer
by: Mihir Kumar Mahata, et al.
Published: (2014-11-01)

Analysis of GaN Grown On Patterned Sapphire Fabricated by Nanosphere Lithography
by: 潘羿明
Published: (2013)

Structural analyses of the dislocations in wurtzite GaN films and AlGaN/GaN heterostructures grown on sapphire substrates
by: Wei-Lin Wang, et al.
Published: (2006)

Study of GaN-based LEDs grown on sapphire substrate with selectively diffused patterns
by: Kuo,Chung-Hao, et al.
Published: (101)

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE
by: Nanliu Liu, et al.
Published: (2021-04-01)

Improvement of Epitaxy GaN Quality Using Nano-Patterned Sapphire Substrates and Grown Semipolar GaN Epilayer on a-Plane Patterned Sapphire Substrates
by: Hsieh, ChengYu, et al.
Published: (2012)

Growth and Characterization of Channel and Buffer Layers of GaN-based HEMTs Grown on Si
by: Yu-Chih Chen, et al.
Published: (2019)

Spontaneous p-type GaN grown on a ZnO buffer layer
by: Cheng-Han Wu, et al.
Published: (2015)

Characterization study of high power GaN PIN devices grown on sapphire
by: Shan, Li-Wei, et al.
Published: (2019)

GaN grown on {12-35} by using Dash Patterned Sapphire Substrate
by: Lin,Chia-Chen, et al.
Published: (2015)

nvestigations of nitride films and GaN/InGaN heterostructures grown on sapphire or silicon substrates
by: Ming Fa Yeh, et al.
Published: (1999)

Effect of Modifying Wet-etched Patterned Sapphire Substrate on GaN Epitaxial Behavior using AlN as buffer layer
by: Lian, Yuan-Chi, et al.
Published: (2017)

Quality-Improved GaN Epitaxial Layers Grown on Striped Patterned Sapphire Substrates Ablated by Femtosecond Laser
by: Yichao Xu, et al.
Published: (2018-10-01)

Epitaxial quality of GaN layer grown on c-sapphire substrate by plasma-assisted molecular beam epitaxy
by: Bo-Chi Chen, et al.

The study of GaN photodetectors with multi-pair SiN/GaN buffer layer
by: Yu-Ling Hsu, et al.
Published: (2008)

Development of the laser decomposition process on GaN/sapphire interface layers
by: Sih-Han Chen, et al.
Published: (2012)

Study on the Buffer Layer and Recrystallization for the Growth of GaN by MOCVD
by: Te-Chung Wang, et al.
Published: (2000)

Analysis of the InGaN ∕ GaN LED With an InGaN ∕ GaN pre-buffer layer
by: Po-Yi Hou, et al.
Published: (2008)

Study and Fabrication of High Power GaN p-i-n Diodes Grown on Sapphire
by: Chang, Yung Fu, et al.
Published: (2015)

Growth and characterizations of GaN thin-film grown on AlN/graphene/sapphire substrates
by: Zhong-Yi Liang, et al.
Published: (2017)

Investigation of InGaN/GaN light-emitting diodes with electron blocking layer grown on c-plane and patterned sapphire substrates
by: Ren-Huei Huang, et al.
Published: (2009)

Effect of the Evolution of Wet-etched Patterned Sapphire on the GaN Epitaxial Behavior
by: Chen, Yu-Chung, et al.
Published: (2014)

AlN Buffer Layer Application of the GaN LED
by: Yung Yu Fan Chiang, et al.
Published: (2010)

Investigation of Arsenic-doped GaN thin Film on GaN/Sapphire Substrates
by: Kun-Bin Huang, et al.
Published: (2003)

Fabrication and Characterization of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates
by: Wei-Kai Wang, et al.
Published: (2006)

Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate
by: Li Hua, et al.
Published: (2008-09-01)

Cannot write session to /tmp/vufind_sessions/sess_r0iqvtc9h1andhqkaob35bvhsi