| Summary: | 碩士 === 國立清華大學 === 電機工程學研究所 === 86 ===
Development of Mo-Sputtering aims at growing I-III-VI2 solar cells of tandem structure, we hope to develop solar cells with low cost, large area, good quality,and 35% energy-conversion efficiency Martin A. Green indicated in his book that the optimum no. of photovoltaic layers of the tandem solar cells is three, and their respective band-gaps are 1.0eV, 1.6eV, and 2.2eV. We can use. I-II-VI2 materaials to tune the different band-gaps with different compositions.
MO-Sputtering combines both the advantage of MOCVD and Reactive Sputtering, which is divided it into subsystems including gas inlet system, reaction chamber, pumping system, power supply, scrubber system, gas leakage detector system, exhaust system, control system, and others.
We used XRD to determine the crystalline phases. The counts of (112) and (220/204) peaks are almost the same, but the (220/204) orientation is sharper than that of the (112) orientation. And we used EDX to determine the film composition. We found the contents of indium and sulfur increased, and the contents of copper and gallium decreased. It was indicated that we could use metal organics to change the compositions of the deposited films.
No work has ever been published previously about combining MOCVD and Reactive Sputtering. Therefore, many unexpected problems have occurred in the system disign, construction, and operation. But some results have been obtained to show the feasibility of MO-Sputtering. To reach the level of industrialization, it is still a long way to go.
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