The Characterization and Fabrication of Integrated PZT Thin Film Pyroelectric Infrared Sensor with Different Thickness Substrate

• Main Authors: An, Feng-Yuan, 安豐沅
• Other Authors: Chang Chung-Cheng
• Format: Others
• Language: zh-TW
• Published: 1998
• Online Access: http://ndltd.ncl.edu.tw/handle/59800087826382111887

碩士 === 國立海洋大學 === 電機工程學系 === 86 === Lead-Zirconate-Titanate(Pb(Zr0.52Ti0.48)O3,PZT) thin film is deposited on the junction effect field transistor(JFET) with the radio frequency magnetron planer sputtering system to fabricated and analyzed. pyroelectric integrated sensors in different fabrication conditions and measurement its performance. According to the experimental results, the deposition rate is 0.35mm per hour. From the XRD pattern we know that, the structure of thin film is perovskite structure. The value of full width of half maximum(FWHM) is 0.225 and the (110) preferred orientation a is 0.15. In the electric measurements, the dielectric constant is 414 and loss tangent is 0.15 at the frequency of 1KHz. From the hysteresis loop, the remanent polarization(Pr) is 14mC/cm2, and saturation polarization is 35mC/cm2. The coercive electric field is 42.8KV/cm. In the fabrication of PIR sensor, the thickness of PZT thin film is 1.4mm and the thickness of silicon diaphragm is about 200mm. The voltage response of fabricated PIR sensor is 1200VW-1 and its specific detectivity is 1.4×108 cmHz1/2W-1. When the thickness of PZT is 1.4mm and thickness of silicon thickness maintain the same, its maximum voltage response is 520V W-1 and its specific detectivity is 4.3 ×107 cmHz1/2W-1.