TSTUDY OF AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTOR FOR HIGH POWER APPLICATIONS
碩士 === 國立雲林科技大學 === 電子與資訊工程技術研究所 === 86 === AlGaAs/GaAs heterojunction bipolar transistors(HBTs) have great potential in m icrowave power applications. Significant progress has beenmade since 1987. Because the thermal conductivity of GaAs is poor(only 1/3 of that of Si), device temperature will be i...
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| Format: | Others |
| Language: | zh-TW |
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1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20160012588031735428 |