Characterization of Zr0.8Sn0.2TiO4 Dielectric Ceramics at Microwave Frequencies

• Main Authors: C.S.Hsu, 許正興
• Other Authors: C.L.Huang
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/41601849901850659288

碩士 === 國立成功大學 === 電機工程學系 === 87 === （Zr，Sn）TiO4 is a one of the important material systems for microwave dielectric resonators. The ceramic dielectric resonators with high dielectric constant , low dielectric loss and low temperature coefficient of frequency are applied to microwave integrated circuits widely. Because the component was scaled down , the characterization of ZST thin films were researched in recent years. This thesis studies the microwave dielectric properties of the dielectric resonators with the optimal composition of Zr0.8Sn0.2TiO4 by adding 1wt% ZnO and while changing the sintering temperature. The experiment results show that the dielectric constant , the quality factor and the temperature coefficient of frequency increase with increasing the sintering temperature. When the sintering temperature is 1400℃, we can find the best microwave dielectric characterization.(εr=38.13，Q=4564，τf=0 ppm/℃) On another hand , we use the best sintering process to fabricate the ZST target. The ZST thin films were fabricated by the rf sputtering and tried to get the best structure of thin films with changing the substrate temperature , sputtering time and Ar/O2 ratio . In this experiment , we can discover that the substrate temperature was increase and the Ar/O2 ratio was decrease , the structure of thin films were better and the sputtering ratio was increase. And than we find the better properties that substrate temperature is 400℃ , sputtering time is 4hr , operation power is 4mtorr , Ar/O2 ratio is 90/10 and the maintained temperature is 400℃ for 2hr. In the future , we can try to make the more process conditions to get the best structure and than apply to design the device .