Real-time Scanning Tunneling Microscopy Study of Thermal Desorption Kinetics on Si(100)- 2×1: H Surface
碩士 === 國立交通大學 === 物理研究所 === 87 === Under the procedure of P and Si growth on Si (100) by chemical vapor deposition from phosphine and disilane, the hydrogen of adsorbed on Si (100) impedes the growth. We investigated, using real-time variable-temperature scanning tunneling microscopy, the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44017430667414997522 |