Broad Band Quantum Well Infrared Photodetectors

• Main Authors: Shih Lang Chou, 周世琅
• Other Authors: C P Lee
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/35463167339814299187

碩士 === 國立交通大學 === 電子工程系 === 87 === In this thesis, I have some research for 8-10μm QWIPs, It contains the introduction for basic theory , processing techniques, measurement, barrier doped QWIPs and broad band QWIPs. About barrier doped QWIPs, I have some research for the influence of doping concentration and doping region for absorption. Besides, I also have some conclusion for dark current. In the experiment , we get the higher doping concentration ,the longer wavelength absorption, therefore, the more dark current follows. The devices Al0.24GaAs/GaAs 450A/55A (10 layers) doping concentration 1.95e12cm-2 and 9.7e11cm-2,we can get their absorption wavelength are 10μm and 9.8μm.If the devices are under 1 volts bias, we can have their dark current are 1e-3 and 8e-4 A, so we have to take the best advantage for the dopant.the best way is to apply delta doping. Al0.24GaAs/GaAs 450A/55A (10 layers) for the different doping region-one is delta doping and the other is in the middle 50A of barrier , doping concentration 1.95e12cm-2 , we get that the absorption wavelength is 10μm and 9μm,and the dark current for delta doping is half the other. At last, applying the conclusion ,we get broad band QWIPs.