Growths and Characterizations of Wide-Bandgap III-Antimonide and III-Nitride Epilayers and Their Device Structures
博士 === 國立交通大學 === 電子物理系 === 87 === We have carried out systematic studies on the epitaxial growth of AlAs1-xSbx, GaN and InxGa1-xN compounds using metalorganic vapor phase epitaxy technique. Experimental data indicate that the solid composition of AlAsSb depends strongly on the input reactant flow r...
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| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74590427695931909661 |