| Summary: | 碩士 === 國立交通大學 === 電子物理系 === 87 === Abstract
We have investigated the optical and electrical properties of magnesium doped GaN films under various doping level and
thermal annealing process. Photoluminescence data reveals that once the Mg is added there shows that a conduction band to acceptor (eA) transition peaked at 385nm for nearly the entire range of Mg-doped samples. When more Mg is doped , a broader blue 430nm feature is also observed, which , we believe, is associated with a DAP transition involving with deep donors introduced by the high concentration of Mg solid incorporation.
Moreover, our Hall data indicate that the optimum thermal annealing temperature for GaN:Mg sample is ∼700℃ . For sample annealed at this temperature for 40 min, we can obtain the resistivity, hole carrier concentration and hole mobility of 0.33Ω-cm, 2×1018cm-3 and 10cm2/V.s, respectively. The corresponding Mg activation efficiency is ∼1/10 as copmared to its SIMS data. These results are among the best data ever reported for p-type Mg-doped GaN films.
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