矽半導體輻射感測器及其信號處理電路之探討
碩士 === 國立清華大學 === 工程與系統科學系 === 87 === Semiconductor radiation detector that we talk about in this research is using photodiode as a detector. Adding the preamplifier and shaping amplifier it forms a sensing system and provides the signal for counting and data processing. We combine photod...
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Format: | Others |
Language: | zh-TW |
Online Access: | http://ndltd.ncl.edu.tw/handle/39811558636599097491 |
Summary: | 碩士 === 國立清華大學 === 工程與系統科學系 === 87 === Semiconductor radiation detector that we talk about in this research is using photodiode as a detector. Adding the preamplifier and shaping amplifier it forms a sensing system and provides the signal for counting and data processing.
We combine photodiode and bipolar junction transistor (BJT) signal processing circuit (preamplifier and linear-amplifier) as a radiation detector. After analyzing the BJT circuit, we find the gain-bandwidth product requirement of the preamplifier is 2.88M and gain-bandwidth product requirement of the linear-amplifier is 3.88M. Therefore, If we find a Operational Amplifier satisfy the requirement, we can replace the BJT circuit by CMOS OP circuit.
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