| Summary: | 碩士 === 國立雲林科技大學 === 電子工程與資訊工程技術研究所 === 87 === A low dielectric constant (low-k) material for an intermetal dielectric (IMD) is imperative to reduce power dissipation, cross talk, and interconnection RC time delay in the deep sub-micron device regime. A novel VELOX or PAE-3 (poly arylene ethers) is one of the possible candidate with lower dielectric constant than conventional silicon dioxide. In the thesis, we found the optimzed coating condition of this low-k material. We have studied on the effects of post plasma treatment for PAE-3 and the integration with Cu. From the study we have found that the H2 plasma treatment on PAE-3 have better properties. In the aspect of integration of Cu and PAE-3, low leakage current were measured after 400oC annealing by H2 plasma treatment. Dielectric constant of intrinsic PAE-3 sample is about 2.6. With the plasma treatment, the value can be decreased to about 2.35. Another low k material, sol-gel, was also discussed in this thesis. The dielectric constant of intrinsic sol-gel film is about 2.7. We found that the leakage current density of sol-gel film is larger than that of the PAE-3 film.
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