The Process Development of Low-k VELOX (PAE-3) and Sol-gel Dielectrics for Deep Sub-Micron Devices
碩士 === 國立雲林科技大學 === 電子工程與資訊工程技術研究所 === 87 === A low dielectric constant (low-k) material for an intermetal dielectric (IMD) is imperative to reduce power dissipation, cross talk, and interconnection RC time delay in the deep sub-micron device regime. A novel VELOX or PAE-3 (poly arylene e...
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| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57334635647502115501 |