Activated barrier of charge carriers in C60 single crystal

碩士 === 中原大學 === 物理學系 === 88 === When C60 single crystal is exposed to air, it’s easy to react with oxygen in air and to increase its dark resistivity drastically. To study the influence of oxygen, time-dependent dark conductivity was measured in two conditions (in-gas and out-gas). Fittin...

Full description

Bibliographic Details
Main Authors: C. H. Wang, 王振翰
Other Authors: K. C. Chiu
Format: Others
Language:zh-TW
Published: 2000
Online Access:http://ndltd.ncl.edu.tw/handle/74055932001461127828
Description
Summary:碩士 === 中原大學 === 物理學系 === 88 === When C60 single crystal is exposed to air, it’s easy to react with oxygen in air and to increase its dark resistivity drastically. To study the influence of oxygen, time-dependent dark conductivity was measured in two conditions (in-gas and out-gas). Fitting the current behavior, we can get the characteristic time constant, i.e., we get the diffusivity of oxygen molecules in C60 single crystal. From Arrhenius plot, the activation energies for out-gas condition is 680 ±120 meV, it corresponds to the oxygen reacting with the defect level to form a trapping level. Besides, we measured the I-V curves at different temperatures, and got the activated energies with respect to the variation of applied bias.