Summary: | 碩士 === 逢甲大學 === 電子工程學系 === 88 === The main goal is to investigate the optical properties of two and zero dimensional quantum systems using three optical techniques in this thesis. In the aspect of two dimensional system, GaAs/AlxGa1-xAs multiple quantum wells, the GaAs-like and AlAs-like phonon frequencies of the first-order modes are measured as a function of Al composition using Raman scattering measurements at 15K. By using hot electron - neutral acceptor luminescence techniques, we have measured the optical phonon energies emitted by the photoexcited electrons in quantum wells. It is shown that the relaxation of hot electrons in the quantum wells is dominated by the GaAs LO phonon emission for small Al composition, but by AlAs-like LO phonons for large x.
In the aspect of zero dimensional system, self-assembled InAs/GaAs quantum dots grown by molecular beam epitaxy, we investigate the influence of various growth parameters on the optical properties of the QDs.
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