Electrodeposition of CuInSe2 Thin Film form CuIn Precursor

• Main Authors: Huang Hui-wen, 黃慧雯
• Other Authors: Whang Thou-jen
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/69214386975379527358

碩士 === 國立成功大學 === 化學系 === 88 === The ternary chalcopyrite semiconductor CuInSe2 (CIS) is a promising material for the fabrication of thin films solar cells due to its high absorption coefficient (α, ~105 cm-1), suitable band gap (Eg＝1.04 ev) and good stability. The experiment used two step electrodeposition to prepare CuInSe2. The first step, we used electrolyte which is prepared with CuCl2, InCl3, TEA (trithanolamine) and NH4OH to deposit CuIn precursors on molybdenum. The second step, we used the solution of SeO2 to deposit Se on CuIn thin film, and then we used heat treatment to form more homogeneous CuInSe2 thin film. The heat treated CIS thin films were characterized using X-ray diffractometry(XRD), scanning electron microscopy(SEM), and energy dispersive spectroscopy(EDS). We add complexing agent(TEA, NH4OH) to make CuIn thin film in first step electrodeposution. After second step electrodeposition of Se(selenium), the factors (ex. temperature, time…etc.) of annealing will effect the CuInSe2 stoichiometry. The annealing condition of 200℃ 25 min is the best to generate CuInSe2 film. By photoelectron experiment, we can get p-type and n-type CIS thin film.