The Studies of Amorphous Silicon Thin Film for Optoelectronic Devices and Its Low-Temperature Crystallization Technology

• Main Authors: Kuen-Hsien Lee, 李坤憲
• Other Authors: Yean-Kuen Fang
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/74540357563587536094

博士 === 國立成功大學 === 電機工程學系 === 88 === The major research purpose of this dissertation is to exploit the new type amorphous silicon optoelectronic devices. With the efforts on researches for various materials combination, different structure improvement and low-temperature crystallization technology, we successfully develop different kinds of a-Si:H optoelectronic devices that possess the advantages of tunability, high optical gain, high output current and are suitable to be integrated with optoelectronic integrated circuits. In chapter 2, we present a new twin-wavelength photodetector by the combination of a-Si:H and a-SiC:H. The feature of this photodetector is that the a-SiC:H is used to absorb blue light and, in the meanwhile, the a-Si:H is set to detect red light. In chapter 3, we first propose a new light converter that converts a blue incident light to a red output light. The developed device combines an a-Si:H PIN photodiode with a GaAsP LED which function as a blue-light absorber and a red-light emitter, respectively. At the next chapter, we demonstrate the significant improvement on the characteristics of conventional a-Si:H APD with an separate-avalanche-and-multiplication (SAM)structure. The developed a-Si:H SAMAPD exhibits larger optical gain and lower dark current than the conventional APD. In chapter 5, we show a novel photoreceiver which integrates an a-Si:H PIN photodiode with a Metal-Insulator-Semiconductor-Switch (MISS) device. The device owns large output current that can drive directly an electrical load and thus is potential to applied in practical optical-sensing circuits. In chapter 6, we pay attention on low-temperature crystallization technology of amorphous silicon thin film to improve the electrical characteristics of amorphous silicon materials. In the temperature range of 200oC~400oC, the amorphous silicon thin film will be crystallized into a poly-silicon film. Therefore, the developed technology is suitable for the low-temperature fabrication of a-Si/poly-Si optoelectronic devices and poly-Si TFT for low-cost IC applications. Chapter 7 is the conclusion and prospect of this work.