Ultra Thin Tantalum Pentaoxide Dielectric Film

• Main Authors: Tzu-Chia Wu, 吳子嘉
• Other Authors: Pang Lin
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/13708392527272040487

碩士 === 國立交通大學 === 材料科學與工程系 === 88 === In this study, we use magnetron frequency sputter technique to make Iridium Oxide (IrOx) bottom electrode and amorphous ultra thin (as-deposited thickness 48Å~125Å)tantalum pentaoxide (Ta2O5). After the Al/Ta2O5/IrOx/SiO2/Si structure is obtained, we study the physical and electrical properties of the film and discussed the relationship between surface roughness, leakage current density and dielectric constant. The film grows proportionally to deposition time after the thickness is larger than 78Å.I-V and C-V measurement revealed that at constant electric field(1.4MV/cm), the film with thickness 65Å has the lowest leakage current density ; the higher the annealing temperature, the higher the dielectric constant. XPS depth profile showed that the O/Ta ratio is close to exact stoichiometery 2.5/1. The Atomic Force Microscope observed that after annealing, the surface becomes rough so that the local electric field deteriorates the leakage current characterization.