Interaction of Phosphine with the Si(111)-7×7 and Ge(100)-2×1 Surfaces by Synchrotron Core-Level Photoemission
碩士 === 國立交通大學 === 物理研究所 === 88 === This thesis describes the investigation of the adsorption and decomposition of phosphine (PH3) and the growth of phosphorus on the Si(111)-7×7 and Ge(100)-2×1 surfaces. The experimental method employed is high-resolution core-level photoemission using s...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/64100939897715973688 |
| Summary: | 碩士 === 國立交通大學 === 物理研究所 === 88 === This thesis describes the investigation of the adsorption and decomposition of phosphine (PH3) and the growth of phosphorus on the Si(111)-7×7 and Ge(100)-2×1 surfaces. The experimental method employed is high-resolution core-level photoemission using synchrotron radiation as the photon source. The PH3 molecules adsorb on the Si(111)-7×7 surface and form PH3(a) and PH2(a) radicals at room temperature. More than 20L of PH3 chemisorb on the Si(111) surface at 300K causes a saturated surface with phosphorus coverage of 0.14ML. Annealing the PH3(a)-saturated surface to the temprature range of 300K-463K, the adsorbed PH3(a) radicals dissociate to form PH2(ads)+H(ads). At 463K, PH2(a) radicals dissociate to form P and H radicals. Annealing to higher temperatures causes H2(g) desorption at 783K and P2(g) desorption at 950K. The growth of phosphorus on Si(111) depends on the substrate temperature. The phosphorus coverage results in the maximum of 0.7 ML at 853K. The overall thermal reactions of PH3(a) on Ge(100) and Si(111) surfaces are similar, although the atomic structure and the dangling bond arrangement of the two surfaces are quite different.
|
|---|