Interaction of Phosphine with the Si(111)-7×7 and Ge(100)-2×1 Surfaces by Synchrotron Core-Level Photoemission
碩士 === 國立交通大學 === 物理研究所 === 88 === This thesis describes the investigation of the adsorption and decomposition of phosphine (PH3) and the growth of phosphorus on the Si(111)-7×7 and Ge(100)-2×1 surfaces. The experimental method employed is high-resolution core-level photoemission using s...
Main Authors: | Tsai Hsin wen, 蔡幸妏 |
---|---|
Other Authors: | Lin Deng sung |
Format: | Others |
Language: | zh-TW |
Published: |
2000
|
Online Access: | http://ndltd.ncl.edu.tw/handle/64100939897715973688 |
Similar Items
-
The Growth of Ge on Si(111)-(7×7) Surface
by: TSAI,ZONG-HAN, et al.
Published: (2016) -
Use synchrotron radiation to study Ge/Si(100) interface and alloy by photoemission
by: Cheng, Nien-Fu, et al.
Published: (1997) -
Photoemission Spectroscopy Studies of SF6 Molecules Adsorbed on Si(111)(7x7) Surface
by: Wei-Chan Tasi, et al.
Published: (2003) -
Morphological transformations induced by Ge and Ge/Si deposition on the Si(111)-(7×7) surface
by: SHIH, YANG JOU, et al.
Published: (2019) -
Photoemission Spectroscopy Studies of CF3I Molecules Adsorbed on Si(111)-7×7 Surface
by: Je-Wei Lin, et al.
Published: (2006)