Research and Evaluation of CMP's Parameters

• Main Authors: I-Wen Lin, 林義文
• Other Authors: Pi-Ying Cheng
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/38270853751675145193

碩士 === 國立交通大學 === 機械工程系 === 88 === Chemical Mechanical Polishing is still a relatively immature process in semiconductor manufacturing and as such has room to grow to get process parameters understood well enough to gain the highest productivity for existing tool sets. At the requirement of high yield, the semiconductor manufacturers want to improve the yield without buying new machines. This paper will focus on understanding process parameters and then adjust some process parameters to improve yield. This paper will promote the methods of pressure measurement to measure real distribution of pressure in wafer’s surface. And by combining the analysis of polishing velocity, we can establish an efficient model to evaluate the uniformity of polishing rate.