Optical and Structural Properties of AgGaS2 Thin Films Prepared by KrF Excimer Laser

• Main Authors: Hsu-Cheng Hsu, 徐旭政
• Other Authors: Wen-Feng Hsieh
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/45225814360168758294

碩士 === 國立交通大學 === 光電工程所 === 88 === In this study, we have grown the AgGaS2 thin films on quartz glass substrates by KrF excimer laser deposition. The influence of annealing on these films has been investigated by X-ray diffraction and photoluminescence measurement. From the temperature dependent photoluminescence spectra we have determined the binding energy of the shallow donors. The effect of the thermal strain was considered from the shifts of the A1 Raman mode and the exciton energy. The absorption spectra exhibits two maxima at which the photon energies correspond to those of A and B/C excitons, respectively. The results agree well with previous reports