| Summary: | 碩士 === 國立中山大學 === 光電工程研究所 === 88 === Abstract
We use InGaAlAs and InGaAsP as materials of 1.55mm multi-quantum-well spot-size converter ridge waveguide lasers. On lateral conversion, we fabricate a taper ridge waveguide. On vertical conversion, we add guard layers on each side of active layer.
For InGaAlAs ridge waveguide lasers, simulation results show a far field 16o × 27o（lateral × vertical）at guard layer width S = 0.1 mm with 300-150-50 mm narrow-tapered waveguide structure.
Due to large Zn background contamination in the MOCVD growth chamber, we did not fabricate the InGaAlAs lasers successfully. For the InGaAsP ridge waveguide lasers, we measure a far field 18o × 28o and a threshold current 23 mA for the 200-250-50 mm narrow-tapered waveguide structure; a far field 20o × 26o and a threshold current 22 mA for the 200-250-50 mm wide-tapered waveguide structure.
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