The Properties and Theoretical Modle of ZnSe Thin Film
碩士 === 國立中山大學 === 電機工程學系研究所 === 88 === Zinc selenide is a wide bandgap II-VI semiconductor. The minimum bandgap at Γ point (zone center) is direct and has a room temperature value of 2.67eV, corresponding to the blue region of the visible spectrum (464nm). Molecular beam epitaxy (MBE) is an ult...
Main Authors: | Yu-An Kuan, 關佑安 |
---|---|
Other Authors: | Herng-Yih,Ueng |
Format: | Others |
Language: | zh-TW |
Online Access: | http://ndltd.ncl.edu.tw/handle/98122393627872081452 |
Similar Items
-
Electroluminescence in epitaxial thin film ZnS and ZnSe
by: Jones, A. P. C.
Published: (1987) -
Study on Electrodeposition of ZnSe Thin Film
by: Yuan-de Lin, et al.
Published: (2007) -
Growth and characterization of ZnSe thin film
by: Chia-wei Huang, et al.
Published: (2010) -
Study on stability of photoluminescence of ZnSe thin films
by: Jin-Jheng Lin, et al.
Published: (2012) -
The Study of Green Thin Film Electroluminescent Devices and ZnSe Thin Films
by: Chin-Tsar Hsu, et al.
Published: (1993)