The Study of the Temperature Ramp-up Rate on the Warpage of IC Packages in the IR-reflow Process

碩士 === 國立中山大學 === 機械工程學系研究所 === 88 === The main aim of this study is to extending the holographic interferometry technique to measure the effect of the temperature ramp-up rate on the warpage of IC packages in the IR-reflow process . It is noted that both the warpage and the ambient temperature chan...

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Main Authors:	Chih-Fang Chang, 張志方
Other Authors:	Chi-Hui Chien
Format:	Others
Language:	zh-TW
Published:	2000
Online Access:	http://ndltd.ncl.edu.tw/handle/06023236914875758794

id	ndltd-TW-088NSYS5490080
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spelling	ndltd-TW-088NSYS54900802016-07-08T04:22:58Z http://ndltd.ncl.edu.tw/handle/06023236914875758794 The Study of the Temperature Ramp-up Rate on the Warpage of IC Packages in the IR-reflow Process 半導體構裝於IR-reflow過程中在不同之溫升速率下翹曲之研究 Chih-Fang Chang 張志方碩士國立中山大學機械工程學系研究所 88 The main aim of this study is to extending the holographic interferometry technique to measure the effect of the temperature ramp-up rate on the warpage of IC packages in the IR-reflow process . It is noted that both the warpage and the ambient temperature change can cause image fringes. Therefore, an auxiliary sphere is used to identify the fringe numbers caused by the ambient temperature change during the experiment. Then, the Taguchi method will be deduced to study the effect of the temperature ramp-up rate and peak waiting temperature on the warpage of PBGA package in the IR-reflow process. Chi-Hui Chien 錢志回 2000 學位論文 ; thesis 83 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立中山大學 === 機械工程學系研究所 === 88 === The main aim of this study is to extending the holographic interferometry technique to measure the effect of the temperature ramp-up rate on the warpage of IC packages in the IR-reflow process . It is noted that both the warpage and the ambient temperature change can cause image fringes. Therefore, an auxiliary sphere is used to identify the fringe numbers caused by the ambient temperature change during the experiment. Then, the Taguchi method will be deduced to study the effect of the temperature ramp-up rate and peak waiting temperature on the warpage of PBGA package in the IR-reflow process.
author2	Chi-Hui Chien
author_facet	Chi-Hui Chien Chih-Fang Chang 張志方
author	Chih-Fang Chang 張志方
spellingShingle	Chih-Fang Chang 張志方 The Study of the Temperature Ramp-up Rate on the Warpage of IC Packages in the IR-reflow Process
author_sort	Chih-Fang Chang
title	The Study of the Temperature Ramp-up Rate on the Warpage of IC Packages in the IR-reflow Process
title_short	The Study of the Temperature Ramp-up Rate on the Warpage of IC Packages in the IR-reflow Process
title_full	The Study of the Temperature Ramp-up Rate on the Warpage of IC Packages in the IR-reflow Process
title_fullStr	The Study of the Temperature Ramp-up Rate on the Warpage of IC Packages in the IR-reflow Process
title_full_unstemmed	The Study of the Temperature Ramp-up Rate on the Warpage of IC Packages in the IR-reflow Process
title_sort	study of the temperature ramp-up rate on the warpage of ic packages in the ir-reflow process
publishDate	2000
url	http://ndltd.ncl.edu.tw/handle/06023236914875758794
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The Study of the Temperature Ramp-up Rate on the Warpage of IC Packages in the IR-reflow Process

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