A 1.8V 2.4GHz CMOS RF Front-end Circuit for Wireless Communication
碩士 === 國立清華大學 === 電子工程研究所 === 88 === A CMOS RF front-end circuits including low-noise amplifier (LNA), Mixer and voltage controlled oscillator (VCO) designed in TSMC 0.35 CMOS process is present in this thesis. A current reused method is adopted in LNA first stage to increase amplifier tr...
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ndltd-TW-088NTHU04280052016-07-08T04:23:17Z http://ndltd.ncl.edu.tw/handle/77773642936592149008 A 1.8V 2.4GHz CMOS RF Front-end Circuit for Wireless Communication 1.8伏特2.4GHzCMOS無線通訊射頻前端電路 Tzung-Shien Lin 林宗賢 碩士 國立清華大學 電子工程研究所 88 A CMOS RF front-end circuits including low-noise amplifier (LNA), Mixer and voltage controlled oscillator (VCO) designed in TSMC 0.35 CMOS process is present in this thesis. A current reused method is adopted in LNA first stage to increase amplifier transconductance without increasing bias current. At 1.5V supply, the LNA minimum noise figure (NF) is 2.7dB, forward gain is 17.5dB and the input third-order interception point is —9dBm while drawing 12mA current. With an active balun generating 180o differential signals at the input of the mixer and a new architecture of low current consumed mixer, the conversion gain is 1 dB and IIP3 is 3dBm where this mixer consumes 18mA from 1.8V power supply. The VCO was designed at 1.8V but began to oscillate at 2.1V supply voltage, and a high quality-factor and low parasitic MOS varactor is used in the VCO design. The frequency of this VCO range from 1.9GHz to 2.6GHz with 30% tuning range without large control voltage needed. The phase noise is —74 dBc/Hz at 1MHz frequency offset. Chen-Hsin Lien 連振炘 2000 學位論文 ; thesis 84 en_US |
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碩士 === 國立清華大學 === 電子工程研究所 === 88 === A CMOS RF front-end circuits including low-noise amplifier (LNA), Mixer and voltage controlled oscillator (VCO) designed in TSMC 0.35 CMOS process is present in this thesis. A current reused method is adopted in LNA first stage to increase amplifier transconductance without increasing bias current. At 1.5V supply, the LNA minimum noise figure (NF) is 2.7dB, forward gain is 17.5dB and the input third-order interception point is —9dBm while drawing 12mA current. With an active balun generating 180o differential signals at the input of the mixer and a new architecture of low current consumed mixer, the conversion gain is 1 dB and IIP3 is 3dBm where this mixer consumes 18mA from 1.8V power supply. The VCO was designed at 1.8V but began to oscillate at 2.1V supply voltage, and a high quality-factor and low parasitic MOS varactor is used in the VCO design. The frequency of this VCO range from 1.9GHz to 2.6GHz with 30% tuning range without large control voltage needed. The phase noise is —74 dBc/Hz at 1MHz frequency offset.
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author2 |
Chen-Hsin Lien |
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Chen-Hsin Lien Tzung-Shien Lin 林宗賢 |
author |
Tzung-Shien Lin 林宗賢 |
spellingShingle |
Tzung-Shien Lin 林宗賢 A 1.8V 2.4GHz CMOS RF Front-end Circuit for Wireless Communication |
author_sort |
Tzung-Shien Lin |
title |
A 1.8V 2.4GHz CMOS RF Front-end Circuit for Wireless Communication |
title_short |
A 1.8V 2.4GHz CMOS RF Front-end Circuit for Wireless Communication |
title_full |
A 1.8V 2.4GHz CMOS RF Front-end Circuit for Wireless Communication |
title_fullStr |
A 1.8V 2.4GHz CMOS RF Front-end Circuit for Wireless Communication |
title_full_unstemmed |
A 1.8V 2.4GHz CMOS RF Front-end Circuit for Wireless Communication |
title_sort |
1.8v 2.4ghz cmos rf front-end circuit for wireless communication |
publishDate |
2000 |
url |
http://ndltd.ncl.edu.tw/handle/77773642936592149008 |
work_keys_str_mv |
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