An Analytical Model of HBM Current Distribution and Its Application on ESD Protection for Sub-Quarter Micron Technology Development
博士 === 國立清華大學 === 電機工程學系 === 88 === Abstract In this study, an analytical model of the positive Human Body Model Electro-Static Discharge (ESD) current distribution along the channel width is developed. The current distribution depends on the channel and well doping profiles, and the posi...
Main Authors: | JIAW-REN SHIH, 施教仁 |
---|---|
Other Authors: | Huey-Liang Hwang |
Format: | Others |
Language: | zh-TW |
Published: |
2000
|
Online Access: | http://ndltd.ncl.edu.tw/handle/26002859730252115134 |
Similar Items
-
ESD Implantationsin in Sub-Quarter-Micron Bulk CMOS Technology
by: Cheng Kai Jen, et al.
Published: (2006) -
ESD implantations and new diode structures in sub-quarter-micron bulk CMOS technology
by: Che-Hao Chuang, et al.
Published: (2001) -
Device Structure with Enhanced Machine-Model ESD Robustness in Sub-Quarter-Micron CMOS Technology
by: Hsin-Chyh Hsu, et al.
Published: (2002) -
ESD full chip simulation: HBM and CDM requirements and simulation approach
by: E. Franell, et al.
Published: (2008-05-01) -
Deep sub-micron ESD GGNMOS layout design and optimization
by: Jun Shi
Published: (2018-01-01)