Characterization and Synthesis of Copper Films With Insoluble Tungsten By Sputter Deposition

• Main Authors: Liu Chi-Jen, 劉啟人
• Other Authors: J. P. Chu
• Format: Others
• Language: en_US
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/72375747434989507286

碩士 === 國立海洋大學 === 材料工程研究所 === 88 === Since copper and tungsten are mutually immiscible, Copper with insoluble tungsten is likely to be a noble material for the high-temperature applications. In this study, Cu-W films are prepared by R.F. magnetron sputter deposition technique. With careful control of processing conditions, the tungsten concentration in Cu-W films can be up to 11.1 at.% by sputter deposition. Nonequlibrium supersaturated solid solutions of W in Cu with nanocrystalline microstructures are observed in as-deposited Cu-W films. Variations in lattice parameters for as-deposited and as-annealed Cu-W films evidenced by XRD again indicate that solute tungsten atoms are in the solid solution with copper. After annealing, nanocrystalline tungsten-rich precipitates phase appear in various Cu-W films at and above 200°C. Thermal analysis results show three distinguished states of annealing for Cu-W films. Microstructures of both as-deposited and as-annealed Cu-W films are examined by SEM and TEM. Ultra-microhardness results show an increase in hardness with tungsten contents for both as-deposited and as-annealed Cu-W films. Electrical resistivity measurements reveal that resistivities of as-deposited Cu-W films of low W contents (<2.3at%W) decrease while a different trend is observed in high W content films, suggesting the improvement in the microstructure.