| Summary: | 碩士 === 國立臺灣大學 === 電機工程學研究所 === 88 === GaN —based nitride semiconductors have gained increasing importance in recent years in luminescent and electronic device applications. In spite of the rapid development, many problems remain, one of them is the fabrication of p-type GaN.
Our group has successfully developed the deposited-film diffusion method to fabricate p-type GaN. But after diffusion, the surface morphology can not be maintained. In the present thesis, we demonstrate that Mg3N2 vapor phase diffusion can not only protect the GaN surface, but also successfully form p-type GaN. The measurement results such as Hall measurement, PL and SIMS all show good agreement with the as-grown p-type GaN.
Furthermore, we have discussed the diffusion behavior of magnesium in GaN. We made a series of diffusion experiments and studied the diffusion profile. Then we explore its anomalous behavior by the Boltzman-Matano method and substitutional-interstitial mechanism.
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