Fabircation of p-type GaN By Mg3N2 Vapor Phase Diffusion
碩士 === 國立臺灣大學 === 電機工程學研究所 === 88 === GaN —based nitride semiconductors have gained increasing importance in recent years in luminescent and electronic device applications. In spite of the rapid development, many problems remain, one of them is the fabrication of p-type GaN. Our group has...
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ndltd-TW-088NTU004421122016-01-29T04:18:38Z http://ndltd.ncl.edu.tw/handle/05907995574065359530 Fabircation of p-type GaN By Mg3N2 Vapor Phase Diffusion 以Mg3N2氣相擴散法製作P型GaN Wen Kai-Wei 文鎧威 碩士 國立臺灣大學 電機工程學研究所 88 GaN —based nitride semiconductors have gained increasing importance in recent years in luminescent and electronic device applications. In spite of the rapid development, many problems remain, one of them is the fabrication of p-type GaN. Our group has successfully developed the deposited-film diffusion method to fabricate p-type GaN. But after diffusion, the surface morphology can not be maintained. In the present thesis, we demonstrate that Mg3N2 vapor phase diffusion can not only protect the GaN surface, but also successfully form p-type GaN. The measurement results such as Hall measurement, PL and SIMS all show good agreement with the as-grown p-type GaN. Furthermore, we have discussed the diffusion behavior of magnesium in GaN. We made a series of diffusion experiments and studied the diffusion profile. Then we explore its anomalous behavior by the Boltzman-Matano method and substitutional-interstitial mechanism. Yang Ying-Jay 楊英杰 2000 學位論文 ; thesis 64 en_US |
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碩士 === 國立臺灣大學 === 電機工程學研究所 === 88 === GaN —based nitride semiconductors have gained increasing importance in recent years in luminescent and electronic device applications. In spite of the rapid development, many problems remain, one of them is the fabrication of p-type GaN.
Our group has successfully developed the deposited-film diffusion method to fabricate p-type GaN. But after diffusion, the surface morphology can not be maintained. In the present thesis, we demonstrate that Mg3N2 vapor phase diffusion can not only protect the GaN surface, but also successfully form p-type GaN. The measurement results such as Hall measurement, PL and SIMS all show good agreement with the as-grown p-type GaN.
Furthermore, we have discussed the diffusion behavior of magnesium in GaN. We made a series of diffusion experiments and studied the diffusion profile. Then we explore its anomalous behavior by the Boltzman-Matano method and substitutional-interstitial mechanism.
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author2 |
Yang Ying-Jay |
author_facet |
Yang Ying-Jay Wen Kai-Wei 文鎧威 |
author |
Wen Kai-Wei 文鎧威 |
spellingShingle |
Wen Kai-Wei 文鎧威 Fabircation of p-type GaN By Mg3N2 Vapor Phase Diffusion |
author_sort |
Wen Kai-Wei |
title |
Fabircation of p-type GaN By Mg3N2 Vapor Phase Diffusion |
title_short |
Fabircation of p-type GaN By Mg3N2 Vapor Phase Diffusion |
title_full |
Fabircation of p-type GaN By Mg3N2 Vapor Phase Diffusion |
title_fullStr |
Fabircation of p-type GaN By Mg3N2 Vapor Phase Diffusion |
title_full_unstemmed |
Fabircation of p-type GaN By Mg3N2 Vapor Phase Diffusion |
title_sort |
fabircation of p-type gan by mg3n2 vapor phase diffusion |
publishDate |
2000 |
url |
http://ndltd.ncl.edu.tw/handle/05907995574065359530 |
work_keys_str_mv |
AT wenkaiwei fabircationofptypeganbymg3n2vaporphasediffusion AT wénkǎiwēi fabircationofptypeganbymg3n2vaporphasediffusion AT wenkaiwei yǐmg3n2qìxiāngkuòsànfǎzhìzuòpxínggan AT wénkǎiwēi yǐmg3n2qìxiāngkuòsànfǎzhìzuòpxínggan |
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