Fabircation of p-type GaN By Mg3N2 Vapor Phase Diffusion
碩士 === 國立臺灣大學 === 電機工程學研究所 === 88 === GaN —based nitride semiconductors have gained increasing importance in recent years in luminescent and electronic device applications. In spite of the rapid development, many problems remain, one of them is the fabrication of p-type GaN. Our group has...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05907995574065359530 |