Fabircation of p-type GaN By Mg3N2 Vapor Phase Diffusion
碩士 === 國立臺灣大學 === 電機工程學研究所 === 88 === GaN —based nitride semiconductors have gained increasing importance in recent years in luminescent and electronic device applications. In spite of the rapid development, many problems remain, one of them is the fabrication of p-type GaN. Our group has...
Main Authors: | Wen Kai-Wei, 文鎧威 |
---|---|
Other Authors: | Yang Ying-Jay |
Format: | Others |
Language: | en_US |
Published: |
2000
|
Online Access: | http://ndltd.ncl.edu.tw/handle/05907995574065359530 |
Similar Items
-
Investigation and Fabrication of AlGaN/GaN and GaN/InGaN HFETs by Metalorganic Vapor Phase Epitaxy system
by: Chuan-I Huang, et al.
Published: (2004) -
The growth of GaN by hidride vapor phase epitaxy
by: Wei-Ching Chao, et al.
Published: (2002) -
Photoluminescence and photoreflectance study on Mg-diffused GaN
by: Cheng-Wei Wu, et al.
Published: (2000) -
Characteristics of Mg-doped GaN by diffusion process
by: C. H. Kuo, et al.
Published: (1999) -
High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT
by: Jin-Ji Dai, et al.
Published: (2021-07-01)