High-resolution Core-level Photoemission Study of Ce on Si(113) 3x2 Surface
碩士 === 淡江大學 === 物理學系 === 88 === We present the first synchrotron-radiation photoemission study of Ce deposited on the Si(113) 32 surface at room temperature. In the clean Si 2p spectrum, two distinctive surface core-level shifts to the lower and higher binding energies with respect to th...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08498743500606282426 |
| Summary: | 碩士 === 淡江大學 === 物理學系 === 88 === We present the first synchrotron-radiation photoemission study of Ce deposited on the Si(113) 32 surface at room temperature. In the clean Si 2p spectrum, two distinctive surface core-level shifts to the lower and higher binding energies with respect to the bulk emission are observed and assigned to the emission from atoms in topmost layer. These surface features were preserved to coverage of 40 Å of Ce. Above the coverage intermixing and silicide growth starts. Up to three new components shifted to lower binding energies are clearly resolved in the Si 2p spectra upon the silicide formation. Simultaneously, the Ce 4d spectra display several components indicating the presence of increasingly Ce-rich phase at higher coverage. The enhanced Fermi emission in the valence-band spectra demonstrates that the silicide is metallic. The annealing effect on the Ce-Si interaction was also studied.
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