| Summary: | 碩士 === 國立雲林科技大學 === 電子工程與資訊工程技術研究所 === 88 === The technique of surface analysis for polycrystalline diamond films is important in the electronic applications. The deposited conditions and the process on the fabrication of the diamond-devices can also be conjectured from the results of analyses. In this study, a different approach of the nucleation method, the diamond powder/photoresist mixture method, was used in this study for the pretreatment of the silicon substrates before the deposition. The isolated diamond film was then obtained by etching the silicon wafer with the KOH solution with a bath temperature of 58℃. Atomic force microscopy (AFM), Raman measurements, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used for analyses on the surface properties for top and interfacial layers of the isolated diamond film after the back-etched process. Different metals of gold(Au), silver(Ag) and indium(In) were adapted to investigate the effect of SERS on the polycrystalline diamond films.
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