| Summary: | 碩士 === 國防大學中正理工學院 === 電子工程研究所 === 89 === As a result of communication industry develop fast, the frequency band was insufficient for our use in middle band and low band. However, the communication device of silicon fabrication with tradition was limited to use in 1GHz, because of the substrate lost. The next developing device of GaAs mainly is a high output power, high efficacy, low power consumption and low lose communication device. The Heterojunction Bipolar Transistor is a most possibility technique of GaAs. The HBT is a bipolar transistor, which is fabricated in GaAs. The most difference between a GaAs device and a silicon device are (1) The HBT introduces a heterojunction technique, and (2) The heavily doping concentration can be used in Base layer.
The point of this work is providing a low cost, convenient, and nondestruction technique to measure the doping concentration of the HBT’s layer. The low temperature photoluminescence technique of this study was used to analyze the band to accepter recombination that resulted due to Carbon doped. Employing the relationship between the wavelength, intensity, full wide at half maximum of photoluminescence spectrum and the concentration to gain the doping concentration and the electric characteristic of device.
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