The Analog Readout Integrated Circuit Design For ISFET Sensors

• Main Authors: Jinn-Fuh.(Robert)Lin, 林進富
• Other Authors: Wen-Yaw.Chung
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/10542915886046470320

碩士 === 中原大學 === 電子工程研究所 === 89 === ABSTRACT Microsensors based on IC technology have caught more attention of the electronic industries, universities and research organizations in recent years. Key researches related to ISFET driver design with the compatible CMOS technology are focused on a low voltage or sensor array readout integrated circuit design. Because the conventional floating-gate readout circuit is not suitable for the sensor array application, the floating-source and bridge-type readout circuit has been studied for aiming a wide-range signal readout system for ISFET characterization in this thesis. In this research, the on-board system has been successfully realized and verified for H+ sensing of the Al2O3 and Si3N4 ISFETs. In addition, we designed a 2V operated bandgap reference generator and buffered operational amplifiers for on-chip implementation. The operation principles, layout consideration and circuit measurements are also given in this thesis. All on-chip circuits have been fabricated in a 0.5□m double-poly and double-metal CMOS technology. Key words： pH value, ISFET, Bandgap reference generator, CMOS operational Amplifier.