The Optical Properties and Applications of AlN Thin Film
碩士 === 中原大學 === 電子工程研究所 === 89 === AlN thin films were grown on SiO2/Si and quartz substrates using Helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied. There is a good c...
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61446952915513631359 |
| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 89 === AlN thin films were grown on SiO2/Si and quartz substrates using Helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied. There is a good correlation of thin film crystallinity addressed by XRD and spectroscopic ellipsometer. The optimized films exhibit highly oriented and extremely smooth surface with r.m.s. roughness of 2Å. The extinction coefficient of the film was lower than that of AlN films grown by conventional sputtering. Double layer anti-reflection (DLAR) coating using AlN and Al2O3 grown on quartz has been first time demonstrated. The transmittance of DLAR was high as 96% compared to 93% of bare substrates. AlN films prepared by Helicon sputtering thus are potential for optical application.
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